Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx012SCM120CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     216.1 A
Ptot  total power dissipation  Tmb = 25 °C     1071 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 75 A; Tj = 25 °C   12  
QG(tot)  total gate charge  ID = 75 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   321   nC
QGD  gate-drain charge   57   nC
Qr  recovered charge  ISD = 75 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   250   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


  Volume production Standard Marking WB012SCM120CGAN6Z 9340 734 70006
WBSF012SCM120CGAN WBSF012SCM120CGAN6V 9340 735 07005
WBST012SCM120CGAN WBST012SCM120CGAN6W 9340 734 81007
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB012SCM120CGAN 9340 734 70006 WB012SCM120CGAN6Z NA NA  
WBSF012SCM120CGAN 9340 735 07005 WBSF012SCM120CGAN6V
WBST012SCM120CGAN 9340 734 81007 WBST012SCM120CGAN6W


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB012SCM120CGAN WB012SCM120CGAN6Z WB012SCM120CGAN Leaded  D always Pb-free    

Chemical Content -WBxx012SCM120CGAN


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