Silicon Carbide Schottky diode (Bare Die).

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Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx020SCM120CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     159 A
Ptot  total power dissipation  Tmb = 25 °C     833 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 50 A; Tj = 25 °C   20  
QG(tot)  total gate charge  ID = 50 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   215   nC
QGD  gate-drain charge   32   nC
Qr  recovered charge  ISD = 50 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   276   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


  Volume production Standard Marking WB020SCM120CGAN6Z 9340 734 75006
WBSF020SCM120CGAN WBSF020SCM120CGAN6V 9340 734 38005
WBST020SCM120CGAN WBST020SCM120CGAN6W 9340 734 39007
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB020SCM120CGAN 9340 734 75006 WB020SCM120CGAN6Z NA NA  
WBSF020SCM120CGAN 9340 734 38005 WBSF020SCM120CGAN6V
WBST020SCM120CGAN 9340 734 39007 WBST020SCM120CGAN6W


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB020SCM120CGAN WB020SCM120CGAN6Z WB020SCM120CGAN Leaded  D Always Pb-free    

Chemical Content -WBxx020SCM120CGAN


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