Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx040SCM120CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     90.5 A
Ptot  total power dissipation  Tmb = 25 °C     556 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 33 A; Tj = 25 °C   40  
QG(tot)  total gate charge  ID = 33 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   115   nC
QGD  gate-drain charge   18   nC
Qr  recovered charge  ISD = 33 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   174   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


  Volume production Standard Marking WB040SCM120CGAN6Z 9340 734 71006
WBSF040SCM120CGAN WBSF040SCM120CGAN6V 9340 735 09005
WBST040SCM120CGAN WBST040SCM120CGAN6W 9340 734 82007
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB040SCM120CGAN 9340 734 71006 WB040SCM120CGAN6Z NA NA  
WBSF040SCM120CGAN 9340 735 09005 WBSF040SCM120CGAN6V
WBST040SCM120CGAN 9340 734 82007 WBST040SCM120CGAN6W


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB040SCM120CGAN WB040SCM120CGAN6Z WB040SCM120CGAN Leaded  D always Pb-free    

Chemical Content -WBxx040SCM120CGAN


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