Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx080SCM120CGAL VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     45 A
Ptot  total power dissipation  Tmb = 25 °C     270 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 20 A; Tj = 25 °C   80  98
QG(tot)  total gate charge  ID = 20 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   59   nC
QGD  gate-drain charge   11   nC
Qr  recovered charge  ISD = 20 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   108   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


  Volume production Standard Marking WB080SCM120CGAL6Z 9340 734 78006
WBSF080SCM120CGAL WBSF080SCM120CGAL6V 9340 735 12005
WBST080SCM120CGAL WBST080SCM120CGAL6W 9340 730 08007
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB080SCM120CGAL 9340 734 78006 WB080SCM120CGAL6Z NA NA  
WBSF080SCM120CGAL 9340 735 12005 WBSF080SCM120CGAL6V
WBST080SCM120CGAL 9340 730 08007 WBST080SCM120CGAL6W


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB080SCM120CGAL WB080SCM120CGAL6Z WB080SCM120CGAL Leaded  D always Pb-free    

Chemical Content -WBxx080SCM120CGAL


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