Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx150SCM120CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     29 A
Ptot  total power dissipation  Tmb = 25 °C     234 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 10 A; Tj = 25 °C   150  
QG(tot)  total gate charge  ID = 10 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   40   nC
QGD  gate-drain charge   9.8   nC
Qr  recovered charge  ISD = 10 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   26   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


  Volume production Standard Marking WB150SCM120CGAN6Z 9340 734 73006
WBSF150SCM120CGAN WBSF150SCM120CGAN6V 9340 735 13005
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB150SCM120CGAN 9340 734 73006 WB150SCM120CGAN6Z NA NA  
WBSF150SCM120CGAN 9340 735 13005 WBSF150SCM120CGAN6V


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB150SCM120CGAN WB150SCM120CGAN6Z WB150SCM120CGAN Leaded  D always Pb-free    

Chemical Content -WBxx150SCM120CGAN


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