Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Optimized for fly-back topologies
  • 15V/0V gate-source voltage compatible with fly-back controllers
  • 100% UIS Tested
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx1K0SCM170CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1700 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     7 A
Ptot  total power dissipation  Tmb = 25 °C     79 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 1 A; Tj = 25 °C   1000  
QG(tot)  total gate charge  ID = 2 A; VDS = 1200 V; VGS = 0 V/18 V; Tj = 25 °C   12   nC
QGD  gate-drain charge   5   nC
Qr  recovered charge  ISD = 1 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   38   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


  Volume production Standard Marking WB1K0SCM170CGANZ 9340 734 80006
WBSF1K0SCM170CGAN WBSF1K0SCM170CGANV 9340 735 15005
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB1K0SCM170CGAN 9340 734 80006 WB1K0SCM170CGANZ NA NA  
WBSF1K0SCM170CGAN 9340 735 15005 WBSF1K0SCM170CGANV


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB1K0SCM170CGAN WB1K0SCM170CGANZ WB1K0SCM170CGAN Leaded  D always Pb-free    

Chemical Content -WBxx1K0SCM170CGAN


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