光伏逆变器
Market Demands
  • Highest efficiency energy conversion
  • Minimise use of cooling fans
  • High reliability
  • High inverter temperatures ask for high Tj(max) power semiconductor devices
  • Space reduction, SMD packages for lower power devices
  • Use of IGBTs as the Switch in the boost converter and in the bridge
  • Low EMI

 

System Overview

3

Application Focus

12

For More Information

IGBTs:

/en/product/igbt/805

Silicon Carbide Diodes:

/en/product/silicon/465

Hyperfast diodes:

/en/product/diodes/37

Ultrafast diodes:

/en/product/diodes/48

Standard Power diodes:

/en/product/diodes/398

WeEn Solutions
  • IGBTs:
  • High-speed with low switching losses
  • Fast and soft recovery anti-parallel diode
  • Positive VCE(sat) temperature coefficient
  • Trench gate field-stop technology
  • Halogen Free package and Pb-free lead finish, RoHS compliant
  • Low thermal resistance
  • Diodes:
  • 600V/30A SABERTM Diode and 1600V/45A Standard Diode in one TO-247 package for space saving and cost reduction
  • Standard diodes for Bypass application, feature low VF for low conduction losses
  • Fast recovery diodes FRD, Ultrafast and Hyperfast, for high frequency switching and low switching losses
  • SiC Diodes for benchmark switching behaviour, independent of temperature